VSM003N06HS-G Datasheet | Vanguard Semiconductor

Features - N-Channel，10V Logic Level Control - Enhancement mode - Vito MOS® Ⅱ Technology - Fast Switching and High efficiency - 100% Avalanche Tested - Pb-free lead plating; Ro HS pliant 65V/150A N-Channel Advanced Power MOSFET V DS 65 V R @ DS(on),TYP VGS=10 V 3.0 mΩ 150 A TO-263 Part ID VSM003N06HS-G Package Type TO-263 Marking 003N06H Tape and reel information 1000pcs/Reel Maximum ratings, at T A=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current Continuous drain current @VGS=10V Pulse drain current tested ① IDSM Continuous drain current @VGS=10V Avalanche energy, single pulsed ② Maximum power dissipation PDSM Maximum power dissipation...