• Part: VSO007N06MS
  • Description: N-Channel Advanced Power MOSFET
  • Manufacturer: Vanguard Semiconductor
  • Size: 447.74 KB
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Datasheet Summary

Features - N-Channel - Enhancement mode - Very low on-resistance RDS(on) @ VGS=4.5 V - Fast Switching - Pb-free lead plating; RoHS pliant 60V/18A N-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5V ID 60 V 6 mΩ 7 mΩ 18 A SOP8 Part ID VSO007N06MS Package Type SOP8 Marking Tape and reel information 007N06M 3000pcs/reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ① PD Maximum power dissipation VGS Gate-Source voltage TA =25°C TA =25°C TA =100°C TA =25°C TA...