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VSO026N04MD - Dual N-Channel Advanced Power MOSFET

Key Features

  • Dual N-Channel，5V Logic Level Control.
  • Enhancement mode.
  • Low on-resistance RDS(on) @ VGS=4.5 V.
  • Fast Switching.
  • High Effective.
  • Pb-free lead plating; RoHS compliant; Halogen-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 40 V 23 mΩ 27.5 mΩ 7A SOP8 Part ID VSO026N04MD Package Type SOP8 Marking 026N04MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source br.

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Datasheet Details

Part number VSO026N04MD
Manufacturer Vanguard Semiconductor
File Size 610.17 KB
Description Dual N-Channel Advanced Power MOSFET
Datasheet download datasheet VSO026N04MD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VSO026N04MD 40V/7A Dual N-Channel Advanced Power MOSFET Features  Dual N-Channel，5V Logic Level Control  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Halogen-Free V DS R @DS(on),TYP VGS=10 V R @DS(on),TYP VGS=4.5 V ID 40 V 23 mΩ 27.