VSP007N10MS-G datasheet by Vanguard Semiconductor.
| Part number | VSP007N10MS-G |
|---|---|
| Datasheet | VSP007N10MS-G-VanguardSemiconductor.pdf |
| File Size | 1.03 MB |
| Manufacturer | Vanguard Semiconductor |
| Description | N-Channel Advanced Power MOSFET |
|
|
Features Enhancement mode Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS® Ⅱ Technology 100% Avalanche test Pb-free lead plating; Symbol Parameter VSP007N10MS-G 100V/85A N-Channel Advanced Power MOSFET Condition Min. pulse width limited by max junction.
View all Vanguard Semiconductor datasheets
| Part Number | Description |
|---|---|
| VSP007N04MS | N-Channel Advanced Power MOSFET |
| VSP007N06MS | N-Channel Advanced Power MOSFET |
| VSP007N07MS | N-Channel Advanced Power MOSFET |
| VSP007P06MS | P-Channel Advanced Power MOSFET |
| VSP002N06HS-G | N-Channel Advanced Power MOSFET |
| VSP002N06MS-G | N-Channel Advanced Power MOSFET |
| VSP002P02KS | P-Channel Advanced Power MOSFET |
| VSP003N04MS-G | N-Channel Advanced Power MOSFET |
| VSP003N06HS | N-Channel Advanced Power MOSFET |
| VSP003N06MS-G | N-Channel Advanced Power MOSFET |
