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VST008N03MS - N-Channel Advanced Power MOSFET

General Description

VST008N03MS designed by the trench processing techniques to achieve extremely low on-resistance.

Key Features

  • Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant.

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Datasheet Details

Part number VST008N03MS
Manufacturer Vanguard Semiconductor
File Size 258.67 KB
Description N-Channel Advanced Power MOSFET
Datasheet download datasheet VST008N03MS Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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VST008N03MS 30V/90A N-Channel Advanced Power MOSFET Features Low On-Resistance Fast Switching 100% Avalanche Tested Repetitive Avalanche Allowed up to Tjmax Lead-Free, RoHS Compliant Description VST008N03MS designed by the trench processing techniques to achieve extremely low on-resistance. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating . These features combine to make this design an extremely efficient and reliable device for use in Motor applications and a wide variety of other applications. Absolute Maximum Ratings Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device.