VS1850GE Datasheet | Vergiga

Features - Enhancement mode - Vito MOS® Ⅱ Technology - 100% Avalanche Tested,100% Rg Tested 100V/7.4A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.5 V I D(Silicon Limited) 100 V 100 mΩ 140 mΩ PDFN3333 Part ID VS1850GE Package Type PDFN3333 Marking 1850GE Packing 5000PCS/Reel Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS IS ID ID IDM Drain-Source breakdown voltage Gate-Source voltage Diode continuous forward current (Silicon limited) Continuous drain current @VGS=10V (Silicon limited) Continuous drain current @VGS=10V (Silicon limited) Pulse drain current tested ① IDSM Continuous drain current @VGS=10V Maximum Avalanche energy, single pulsed ② Maximum power dissipation ③ PDSM Maximum power dissipation ④ TJ,TSTG Operating Junction and Storage Temperature Range Thermal Characteristics TC = 25°C TC = 25°C TC = 100°C TC = 25°C TA = 25°C TA = 70°C TC = 25°C TC = 100°C TA = 25°C TA = 70°C Symbol Parameter Typical RθJC Thermal Resistance, Junction-to-Case ⑤ RθJA Thermal Resistance, Junction-to-Ambient...