GT100DA120U Description
.DataSheet.co.kr GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100.
GT100DA120U Key Features
- Trench IGBT technology temperature coefficient
- Square RBSOA
- 10 μs short circuit capability
- HEXFRED® antiparallel diodes with ultrasoft reverse recovery
- TJ maximum = 150 °C
- Fully isolated package
- Very low internal inductance ( 5 nH typical)
- Industry standard outline
- UL approved file E78996
- pliant to RoHS directive 2002/95/EC