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GT100DA120U - Insulated Gate Bipolar Transistor

Features

  • Trench IGBT technology temperature coefficient.
  • Square RBSOA.
  • 10 μs short circuit capability.

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Datasheet preview – GT100DA120U

Datasheet Details

Part number GT100DA120U
Manufacturer Vishay Siliconix
File Size 242.19 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet GT100DA120U Datasheet
Additional preview pages of the GT100DA120U datasheet.

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Full PDF Text Transcription

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www.DataSheet.co.kr GT100DA120U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temperature coefficient • Square RBSOA • 10 μs short circuit capability • HEXFRED® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive • TJ maximum = 150 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC 1200 V 100 A at 119 °C 1.
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