GT100DA60U - Insulated Gate Bipolar Transistor

Vishay

Key Features

Trench IGBT technology temperature coefficient.
Square RBSOA.
3 μs short circuit capability.
FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive.
TJ maximum = 175 °C.
Fully isolated package.
Very low internal inductance ( 5 nH typical).
Industry standard outline.
UL approved file E78996.
Compliant to RoHS directive 2002/95/EC 600 V 100 A at 117 °C 1.72 V 100 A at 25 °C P.

GT100DA60U insulated gate bipolar transistor by Vishay - Datasheet Preview

Datasheet Details

Part number	GT100DA60U
Manufacturer	Vishay
File Size	240.15 KB
Description	Insulated Gate Bipolar Transistor
Datasheet	GT100DA60U Datasheet

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www.DataSheet.co.kr GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC 600 V 100 A at 117 °C 1.