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GT100DA60U - Insulated Gate Bipolar Transistor

Features

  • Trench IGBT technology temperature coefficient.
  • Square RBSOA.
  • 3 μs short circuit capability.
  • FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive.
  • TJ maximum = 175 °C.
  • Fully isolated package.
  • Very low internal inductance ( 5 nH typical).
  • Industry standard outline.
  • UL approved file E78996.
  • Compliant to RoHS directive 2002/95/EC 600 V 100 A at 117 °C 1.72 V 100 A at 25 °C P.

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Datasheet preview – GT100DA60U

Datasheet Details

Part number GT100DA60U
Manufacturer Vishay Siliconix
File Size 240.15 KB
Description Insulated Gate Bipolar Transistor
Datasheet download datasheet GT100DA60U Datasheet
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www.DataSheet.co.kr GT100DA60U Vishay Semiconductors Insulated Gate Bipolar Transistor (Trench IGBT), 100 A FEATURES • Trench IGBT technology temperature coefficient • Square RBSOA • 3 μs short circuit capability • FRED Pt® antiparallel diodes with ultrasoft reverse recovery SOT-227 with positive • TJ maximum = 175 °C • Fully isolated package • Very low internal inductance ( 5 nH typical) • Industry standard outline • UL approved file E78996 • Compliant to RoHS directive 2002/95/EC 600 V 100 A at 117 °C 1.
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