IRFR310 Datasheet | Vishay

FEATURES - Dynamic d V/dt rating - Repetitive avalanche rated - Surface-mount (IRFR310, Si HFR310) - Straight lead (IRFU310, Si HFU310) - Available in tape and reel - Fast switching Available - Fully avalanche rated - Material categorization: for definitions of pliance please see .vishay./doc?99912 DESCRIPTION Third generation power MOSFETs form Vishay provide the designer with the best bination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, Si HFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface-mount applications. ORDERING INFORMATION Package DPAK (TO-252) Si HFR310-GE3 Lead (Pb)-free and halogen-free Si HFR310TRR-GE3 a Lead (Pb)-free IRFR310Pb F Notes a. See device orientation b. “-BE3” denotes alternate manufacturing location DPAK (TO-252) Si HFR310TRL-GE3 a IRFR310TRLPb F-BE3 a, b IRFR310TRLPb F a DPAK (TO-252) Si HFR310TR-GE3 a IRFR310TRPb F-BE3 a, b IRFR310TRPb F a IPAK (TO-251) Si HFU310-GE3 IRFU310Pb F ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL Drain-source voltage Gate-source voltage Continuous drain current Pulsed drain current a Linear derating factor Linear derating factor (PCB mount) e Single pulse avalanche energy b Repetitive avalanche current a Repetitive avalanche energy a Maximum power dissipation Maximum power dissipation (PCB mount) e Peak diode recovery d V/dt c Operating junction and storage temperature range Soldering remendations (peak temperature) d VGS at 10 V TC = 25 °C TC = 100 °C TC = 25 °C TA = 25 °C For 10 s VDS VGS ID IDM EAS IAR EAR PD d V/dt TJ, Tstg Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11) b. VDD = 50 V, starting TJ = 25 °C, L = 52 m H, Rg = 25 , IAS = 1.7 A (see fig. 12) c. ISD  1.7 A, d...