Description
Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
Features
- Dynamic dV/dt rating.
- Repetitive avalanche rated
Available.
- Logic-level gate drive.
- RDS(on) specified at VGS = 4 V and 5 V.
- 175 °C operating temperature
Available.
- Fast switching.
- Ease of paralleling.
- Material categorization: for definitions of compliance please see www. vishay. com/doc?99912
Note.
- This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non RoHS-compliant.