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MBRF20100CT - Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Key Features

  • Trench MOS Schottky technology.
  • Low power losses, high efficiency.
  • Low forward voltage drop.
  • High forward surge capability.
  • High frequency operation.
  • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106.
  • Material categorization: for definitions of compliance please see www. vishay. com/doc?99912.

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Datasheet Details

Part number MBRF20100CT
Manufacturer Vishay
File Size 77.62 KB
Description Dual High-Voltage Trench MOS Barrier Schottky Rectifier
Datasheet download datasheet MBRF20100CT Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.vishay.com MBRF2090CT, MBRF20100CT Vishay General Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier TMBS ® ITO-220AB 123 MBRF2090CT MBRF20100CT PIN 1 PIN 2 PIN 3 PRIMARY CHARACTERISTICS IF(AV) 2 x 10 A VRRM IFSM 90 V, 100 V 150 A VF at IF = 10 A 0.65 V TJ max. 150 °C Package ITO-220AB Diode variation Dual common cathode FEATURES • Trench MOS Schottky technology • Low power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder bath temperature 275 °C max. 10 s, per JESD 22-B106 • Material categorization: for definitions of compliance please see www.vishay.