MBRF25H35CT Overview
.DataSheet.co.kr New Product MBR(F,B)25H35CT thru MBR(F,B)25H60CT Vishay General Semiconductor Dual mon-Cathode Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB ITO-220AB.
MBRF25H35CT Key Features
- Guardring for overvoltage protection
- Lower power losses, high efficiency
- Low forward voltage drop
- Low leakage current
- High forward surge capability
- High frequency operation
- Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package)
- Solder dip 260 °C, ITO-220AB package)
- AEC-Q101 qualified 40 s (for TO-220AB and
- pliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC