• Part: S852TF
  • Description: Silicon NPN Planar RF Transistor
  • Category: Transistor
  • Manufacturer: Vishay
  • Size: 173.27 KB
Download S852TF Datasheet PDF
Vishay
S852TF
S852TF is Silicon NPN Planar RF Transistor manufactured by Vishay.
Description The main purpose of this bipolar transistor is broadband amplification up to 2 GHz. In the space-saving 3-pin surface-mount SOT-490 package electrical performance and reliability are taken to a new level covering a smaller footprint on PC boards than previous packages. In addition to space savings, the SOT-490 provides a higher level of reliability than other 3-pin packages, such as more resistance to moisture. Electrostatic sensitive device. Observe precautions for handling. Due to the short length of its leads the SOT-490 is also reducing package inductances resulting in some better electrical performance. All of these aspects make this device an ideal choice for demanding RF applications. Applications For low noise and high gain broadband amplifiers at collector currents from 0.2 m A to 5 m A. Features - - - - - - - Low supply voltage Low current consumption e3 Low noise figure 50 Ω input impedance at 945 MHz High power gain Lead (Pb)-free ponent ponent in accordance to Ro HS 2002/95/EC and WEEE 2002/96/EC Mechanical Data Typ: S852TF Case: SOT-490 Plastic case Weight: approx. 2.5 mg Pinning: 1 = Collector, 2 = Base, 3 = Emitter Parts Table Part S852TF 52 Marking SOT-490 Package Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Tamb ≤ 125 °C Test condition Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 - 65 to + 150 Unit V V V m A m W °C °C Document Number 85104 Rev. 1.3, 02-May-05 .vishay. 1 Vishay Semiconductors Maximum Thermal Resistance Parameter Junction ambient 1) 1) Test condition Symbol Rth JA Value 450 Unit K/W on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35 μm Cu Electrical DC Characteristics Tamb = 25 °C, unless otherwise specified Parameter Collector-emitter cut-off current Collector-base cut-off...