S852 Datasheet | Vishay

Features D Low supply voltage D Low current consumption D 50 W input impedance at 945 MHz D Low noise figure D High power gain 13 581 94 9280 13 652 13 570 S852T Marking: 852 1 = Collector, 2 = Base, 3 = Emitter S852TW Marking: W52 Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC Ptot Tj Tstg Value 12 6 2 8 30 150 - 65 to +150 Unit V V V m A m W °C °C Tamb ≤ 125 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol Rth JA Value 450 Unit K/W Document Number 85052 Rev. 3, 20-Jan-99 .vishay.de - Fax Back +1-408-970-5600 1 (7) S852T/S852TW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Conditions VCE = 12 V, VBE = 0 VCB = 8 V, IE = 0 VEB = 1 V, IC = 0 IC = 1 m A, IB = 0 IC = 5 m A, IB = 0.5 m A VCE = 3 V, IC = 1 m A Symbol Min ICES ICBO IEBO V(BR)CEO 6 VCEsat h FE 40 Typ Max Unit 100 m A 100 n A 1 m A V 0.4 V 150 0.1 90 Electrical AC Characteristics Tamb = 25_C, unless otherwise specified Parameter Transition frequency q y Collector-base capacitance Noise figure Test Conditions VCE = 3 V, IC = 1 m A, f = 500 MHz VCE = 2 V, IC = 1.5 m A, f = 500 MHz VCB = 1 V, f = 1 MHz ZS = ZSopt, f = 450 MHz, VCE = 2 V, IC = 0.5 m A ZS = ZSopt, f = 945 MHz, VCE = 3 V, IC = 1 m A ZS = ZSopt, f = 945 MHz, VCE = 2 V, IC = 1.5 m A VCE = 2 V, IC = 0.5 m A, f = 450MHz VCE = 3 V, IC = 1 m A, f = 945 MHz VCE = 2 V, IC = 1.5...