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SI1035X - MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFET: 1.5 V Rated.
  • Very Small Footprint.
  • High-Side Switching.
  • Low On-Resistance: N-Channel, 5  P-Channel, 8 .
  • Low Threshold: ± 0.9 V (typ. ).
  • Fast Switching Speed: 45 ns (typ. ).
  • 1.5 V Operation.
  • Gate-Source ESD Protected: 2000 V.
  • Compliant to RoHS Directive 2002/95/EC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Si1035X Vishay Siliconix Complementary N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.5 V N-Channel 20 7 at VGS = 2.5 V 9 at VGS = 1.8 V 10 at VGS = 1.5 V 8 at VGS = - 4.5 V P-Channel 12 at VGS = - 2.5 V - 20 15 at VGS = - 1.8 V 20 at VGS = - 1.5 V ID (mA) 200 175 150 50 - 150 - 125 - 100 - 30 S1 1 SC-89 6 D1 G1 2 5 G2 Marking Code: M D2 3 4 S2 Top View Ordering Information: Si1035X-T1-GE3 (Lead (Pb)-free and Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET: 1.5 V Rated • Very Small Footprint • High-Side Switching • Low On-Resistance: N-Channel, 5  P-Channel, 8  • Low Threshold: ± 0.9 V (typ.) • Fast Switching Speed: 45 ns (typ.) • 1.