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SI1032R - N-Channel MOSFET

Key Features

  • Halogen-free According to IEC 61249-2-21 Definition.
  • Low-Side Switching.
  • Low On-Resistance: 5 .
  • Low Threshold: 0.9 V (typ. ).
  • Fast Switching Speed: 35 ns.
  • TrenchFET® Power MOSFETs: 1.5 V Rated.
  • 2000 V ESD Protection.
  • Compliant to RoHS Directive 2002/95/EC.

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Datasheet Details

Part number SI1032R
Manufacturer Vishay
File Size 129.53 KB
Description N-Channel MOSFET
Datasheet download datasheet SI1032R Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N-Channel 1.5 V (G-S) MOSFET Si1032R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.5 V 7 at VGS = 2.5 V 20 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA) 200 175 150 50 SC-75A or SC-89 G1 3D S2 Top View Marking Code: G Ordering Information: Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low-Side Switching • Low On-Resistance: 5  • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 35 ns • TrenchFET® Power MOSFETs: 1.