SI1032X - N-Channel MOSFET

Vishay

Download the SI1032X datasheet PDF. This datasheet also covers the SI1032R variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

Key Features

Halogen-free According to IEC 61249-2-21 Definition.
Low-Side Switching.
Low On-Resistance: 5 .
Low Threshold: 0.9 V (typ. ).
Fast Switching Speed: 35 ns.
TrenchFET® Power MOSFETs: 1.5 V Rated.
2000 V ESD Protection.
Compliant to RoHS Directive 2002/95/EC.

📥 Download Datasheet

SI1032X n-channel mosfet by Vishay - Datasheet Preview — Note: The manufacturer provides a single datasheet file (SI1032R_VishaySiliconix.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	SI1032X
Manufacturer	Vishay
File Size	129.53 KB
Description	N-Channel MOSFET
Datasheet	SI1032X Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
Si1032	10-Bit ADC MCU	Silicon Laboratories
SI1032R	N-Channel MOSFET	Vishay Siliconix
Si1030	10-Bit ADC MCU	Silicon Laboratories
Si1031	10-Bit ADC MCU	Silicon Laboratories
SI1031R	P-Channel MOSFET	Vishay Siliconix

Other Datasheets by Vishay

Part Number	Description
Si1034CX	Dual N-Channel MOSFET
SI1036X	Dual N-Channel MOSFET
Si1037X	P-Channel 1.8 V (G-S) MOSFET
SI1002R	N-channel MOSFET
SI1013CX	MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

N-Channel 1.5 V (G-S) MOSFET Si1032R/X Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) () 5 at VGS = 4.5 V 7 at VGS = 2.5 V 20 9 at VGS = 1.8 V 10 at VGS = 1.5 V ID (mA) 200 175 150 50 SC-75A or SC-89 G1 3D S2 Top View Marking Code: G Ordering Information: Si1032R-T1-GE3 (SC-75A, Lead (Pb)-free and Halogen-free) Si1032X-T1-GE3 (SC-89, Lead (Pb)-free -free Halogen-free) FEATURES • Halogen-free According to IEC 61249-2-21 Definition • Low-Side Switching • Low On-Resistance: 5  • Low Threshold: 0.9 V (typ.) • Fast Switching Speed: 35 ns • TrenchFET® Power MOSFETs: 1.