Vishay SI1032R
N-Channel MOSFET
FEATURES
● Halogen-free According to IEC 61249-2-21 Definition● Low-Side Switching
● Low On-Resistance: 5
● Low Threshold: 0.9 V (typ.)
● Fast Switching Speed: 35 ns
● TrenchFET® Power MOSFETs: 1.5 V Rated
● 2000 V ESD Protection
● Compliant to RoHS Directive 2002/95/EC BENEFITS
● Ease in Driving Switches
● Low Offset (Error) Voltage
● Low-Voltage Operation
● High-Speed Circuits
● Low Battery Voltage Operation
APPLICATIONS
● Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories● Battery Operated Systems
● Power Supply Converter Circuits
● Load/Power Switching Cell Phones, Pagers
ABSOLUTE MAXIMUM RATINGS
(TA = 25 °C, unless otherwise noted) Si1032R Si1032X Parameter Symbol 5 s Steady State 5 s Steady State Drain-Source Voltage VDS 20 Gate-Source Voltage VGS ± 6 Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Currenta TA = 25 °C TA = 85 °C ID IDM 200 140 110 100 500 210 200 150 140 600 Continuous Source Current (Diode Conduction)a IS 250 200 300 240 Maximum Power Dissip...