SI1046X Datasheet | Vishay

FEATURES - Halogen-free Option Available - Trench FET® Power MOSFET: 1.8 V Rated - ESD Protected: 2000 V Ro HS PLIANT APPLICATIONS - Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories - Battery Operated Systems - Power Supply Converter Circuits - Load/Power Switching Cell Phones, Pagers .. SC89-3L G 1 Marking Code 3 3 D YY Lot Traceability and Date Code 2 Top View Part # Code Ordering Information: Si1046X-T1-E3 (Lead (Pb)-free) Si1046X-T1-GE3 (Lead (Pb)-free and Halogen-free) ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source-Drain Diode Current Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25 °C TA = 70 °C TA = 25 °C TA = 25 °C TA = 70 °C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit 20 ±8 0.606b, c 0.485b, c 2.5 0.21b, c 0.25b, c 0.16b, c - 55 to 150 Unit V W °C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb, d Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 650 °C/W. t≤5s Steady State Symbol Rth JA Typical 440 540 Maximum 530 650 Unit °C/W Document Number: 74594 S-81543-Rev. B, 07-Jul-08 .vishay. 1 New Product Vishay Siliconix SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VGS(th) Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current VDS ΔVDS/TJ ΔVGS(th)/TJ VGS(th) IGSS IDSS ID(on) RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd Rg td(on) tr td(off) tf ISM VSD trr Qrr ta tb IF = 1.0 A, d I/dt = 100 A/µs IS = 0.48 A 0.8 16 4.8 12.3 3.7 VDD = 10 V, RL = 20.8 Ω ID ≅ 0.48 A, VGEN = 4.5 V, Rg = 1 Ω f = 1 MHz VDS = 10 V, VGS = 5 V, ID = 0.606 A VDS = 10 V, VGS = 4.5 V, ID = 0.606 A VDS = 10 V, VGS = 0 V, f = 1 MHz VGS = 0 V, ID = 250 µA ID =...