• Part: SI1912EDH
  • Description: Dual N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Vishay
  • Size: 115.48 KB
Download SI1912EDH Datasheet PDF
Vishay
SI1912EDH
SI1912EDH is Dual N-Channel MOSFET manufactured by Vishay.
FEATURES - Halogen-free According to IEC 61249-2-21 Definition - Trench FET® Power MOSFETs: 1.8 V Rated - ESD Protected: 2000 V - Thermally Enhanced SC-70 Package - pliant to Ro HS Directive 2002/95/EC APPLICATIONS - Load Switching - PA Switch - Level Switch D1 D2 S1 1 G1 2 D2 3 6 D1 5 G2 4 S2 Marking Code CA XX Lot Traceability and Date Code G1 Part # Code 1k 1k G2 Top View Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free) Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 S2 ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5s Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Diode-Current (Diode Conduction)a TA = 25 °C TA = 85 °C Maximum Power Dissipationa TA = 25 °C TA = 85 °C Operating Junction and Storage Temperature Range VDS...