SI1912EDH
SI1912EDH is Dual N-Channel MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21
Definition
- Trench FET® Power MOSFETs: 1.8 V Rated
- ESD Protected: 2000 V
- Thermally Enhanced SC-70 Package
- pliant to Ro HS Directive 2002/95/EC
APPLICATIONS
- Load Switching
- PA Switch
- Level Switch
D1
D2
S1 1 G1 2 D2 3
6 D1 5 G2 4 S2
Marking Code CA XX
Lot Traceability and Date Code
G1
Part # Code
1k
1k G2
Top View
Ordering Information: Si1912EDH-T1-E3 (Lead (Pb)-free) Si1912EDH-T1-GE3 (Lead (Pb)-free and Halogen-free)
S1
S2
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
Pulsed Drain Current Continuous Diode-Current (Diode Conduction)a
TA = 25 °C TA = 85 °C
Maximum Power Dissipationa
TA = 25 °C TA = 85 °C
Operating Junction and Storage Temperature Range
VDS...