The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
www.DataSheet.co.kr
New Product
Si2342DS
Vishay Siliconix
N-Channel 8 V (D-S) MOSFET
FEATURES PRODUCT SUMMARY
VDS (V) RDS(on) () 0.017 at VGS = 4.5 V 0.020 at VGS = 2.5 V 8 0.022 at VGS = 1.8 V 0.030 at VGS = 1.5 V 0.075 at VGS = 1.2 V
SOT-23
ID (A)a, e 6 6 6 6 6
Qg (Typ.)
6 nC
• Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • Low On-Resistance • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC
APPLICATIONS
• Load Switches for Low Voltage Gate Drive • Low Voltage Operating Circuits - Gate Drive 1.