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Si3420DV
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
FEATURES
ID (A)
0.5
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
3.7 @ VGS = 10 V
D 100% Rg Tested
TSOP-6 Top View
1 3 mm 6 5 (3) G 3 4
(1, 2, 5, 6) D
2
2.85 mm (4) S Ordering Information: Si3420DV-T1 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 0 1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
5 secs
200 "20 0.5 0.4 1 1 0.05 1 2.1 1.
SI3420DV Datasheet
