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Si3422DV
New Product
Vishay Siliconix
N-Channel 200-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
200
rDS(on) (W)
5 @ VGS = 10 V
ID (A)
"0.42
(1, 2, 5, 6) D
TSOP-6 Top View
1 6 (3) G
3 mm
2
5
3
4 (4) S N-Channel MOSFET
2.85 mm
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current (10 ms Pulse Width) Avalanche Current Single Avalanche Energy Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C L = 0.1 mH TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IAS EAS IS PD TJ, Tstg
5 secs
200 "20 "0.42 "0.34
Steady State
Unit
V
"0.31 "0.25 "0.75 "0.75 0.028 "1 mJ A 1.
SI3422DV Datasheet
