SI3863DV
FEATURES
D 105-m W Low r DS(on) Trench FETt D 2.5 to 12-V Input D 1.5 to 8-V Logic Level Control
DESCRIPTION
The Si3863DV includes a p- and n-channel MOSFET in a single TSOP-6 package. The low on-resistance p-channel Trench FETR is tailored for use as a load switch. The n-channel, with an external resistor, can be used as a level-shift to drive the p-channel load-switch. The n-channel MOSFET has internal ESD protection and can be driven by logic signals as low as 1.5-V. The Si3863DV operates on supply lines from 2.5 to 12-V, and can drive loads up to 2.5 A.
APPLICATION CIRCUITS
Si3863DV Switching Variation R2 @ VIN = 3 V, R1 = 20 k W
IL = 1 A VON/OFF = 3 V Ci = 10 m F Co = 1 m F
25 2, 3 VOUT 20
4 VIN Q2 R1 6 tf C1 Time ( m S) 6 15 td(off)
10 tr 5 td(on)
5 ON/OFF Q1 Co LOAD
Ci 1 R2 R2 GND
0 0 2 4 R2 (k W) Note: For R2 switching variations with other VIN/R1 binations See Typical Characteristics 6 8
PONENTS
R1 R2 C1 Pull-Up Resistor Optional Slew-Rate Control Optional Slew-Rate Control...
