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Si3911DV
New Product
Vishay Siliconix
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.145 @ VGS = –4.5 V –20 0.200 @ VGS = –2.5 V 0.300 @ VGS = –1.8 V
ID (A)
–2.2 –1.8 –1.5
S1
S2
TSOP-6 Top View
G1 1 6 D1 G1 3 mm S2 2 5 S1 G2
G2
3
4
D2
2.85 mm
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Diode Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C
Symbol
VDS VGS
5 secs
Steady State
–20 "8
Unit
V
–2.2 ID –1.8 IDM IS –1.05 1.15 0.73 –55 to 150 "8
–1.8 –1.5 A
–0.75 0.83 0.
SI3911DV Datasheet
