SI4330DY
FEATURES
D Trench FETr Power MOSFET D 100% Rg Tested
PRODUCT SUMMARY
VDS (V)
APPLICATIONS
ID (A)
8.7 7.5 r DS(on) (W)
0.0165 @ VGS = 10 V 0.022 @ VGS = 4.5 V
D Notebook
- Load Switch
- DC/DC Conversion
- Auxiliary Voltage
D1
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4330DY- E3 Si4330DY-T1- E3 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
30 "20 8.7 7.0 "30 1.7 2.0 1.3
Steady State
Unit
6.6 5.3 A
0.9 1.1 0.7
- 55 to 150 W _C
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain)...
