SI4336DY
FEATURES
- Ultra Low On-Resistance Using High
Density Trench FET® Gen II Power MOSFET Technology
- Qg Optimized
- 100 % Rg Tested
APPLICATIONS
- Synchronous Buck Low-Side
- Notebook
- Server
- Workstation
- Synchronous Rectifier, POL
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
25 20
17 13
Pulsed Drain Current (10 µs Pulse Width)
IDM 70
Continuous Source Current (Diode Conduction)a
IS 2.9 1.3
Avalanche Current
L = 0.1 m H
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
3.5...
