SI4366DY
FEATURES
- Trench FET® Power MOSFET
- Optimized for “Low Side” Synchronous
Rectifier Operation
- 100 % RG Tested
APPLICATIONS
- DC/DC Converters
- Synchronous Rectifiers
Available
Ro HS-
PLIANT
S N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
VDS 30
Gate-Source Voltage
± 12
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
20 15
13 10
Pulsed Drain Current (10 µs Pulse Width)
IDM 60
Continuous Source Current (Diode Conduction)a
IS 2.9 1.3
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
3.5 2.2
1.6 1
Operating Junction and Storage Temperature Range
TJ,...
