SI4562DY
SI4562DY is MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFET: 2.5 Rated
- pliant to Ro HS directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4562DY-T1-E3 (Lead (Pb)-free) Si4562DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 G1
S2 G2
S1 N-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Drain-Source Voltage Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa
Operating Junction and Storage Temperature Range
TA = 25 °C TA = 70 °C
TA = 25 °C TA = 70 °C
VDS VGS
IDM IS
TJ, Tstg
- 20 ± 12
- 6.2 5.7
- 4.9 40
- 40 1.7
- 1.7
2.0 1.3
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta...
