SI4828DY Datasheet | Vishay

New Product Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) Channel-1 30 Channel-2 r DS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0135 @ VGS = 10 V 0.0175 @ VGS = 4.5 V ID (A) 7.5 6.5 9.8 8.5 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET G1 G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Channel-1 P Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C Channel-2 10 secs 30 "20 S b l Symbol VDS VGS ID IDM IS PD TJ, Tstg 10 secs Steady State Steady State U i Unit 7.5 6 30 1.8 2 1.78 5.8 4.6 9.8 7.8 40 7.5 6 A 1.06 1.17 0.75 - 55 to 150 1.8 2 1.28 1.06 1.17 0.75 W _C Operating Junction and Storage Temperature Range THERMAL RESISTANCE RATINGS Channel-1 P Parameter Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Notes a. Surface Mounted on 1” x 1” FR4 Board. Document Number: 71181 S-00983- Rev. A, 15-May-00 .vishay. S Fax Back 408-970-5600 t v 10 sec Steady-State Steady-State Channel-2...