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Si4828DY
New Product
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
Channel-1 30 Channel-2
rDS(on) (W)
0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V 0.0135 @ VGS = 10 V 0.0175 @ VGS = 4.5 V
ID (A)
7.5 6.5 9.8 8.5
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel 1 MOSFET S2 N-Channel 2 MOSFET G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Channel-1 P Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Channel-2 10 secs
30 "20
S b l Symbol
VDS VGS ID IDM IS PD TJ, Tstg
10 secs
Steady State
Steady State
U i Unit
V
7.5 6 30 1.8 2 1.78
5.
SI4828DY Datasheet
