SI4832DY
SI4832DY is N-Channel MOSFET manufactured by Vishay.
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET with Schottky Diode
MOSFET PRODUCT SUMMARY
VDS (V)
30 r DS(on) (W)
0.018 @ VGS = 10 V 0.028 @ VGS = 4.5 V
ID (A)
9 7.3
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (V) Diode Forward Voltage
0.53 V @ 3.0 A
IF (A)
4.0 D
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D Ordering Information: D D D N-Channel MOSFET S Si4832DY Si4832DY-T1 (with Tape and Reel) Schottky Diode G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage (MOSFET) Reverse Voltage (Schottky) Gate-Source Voltage (MOSFET) Continuous Drain Current (TJ = 150_C) (MOSFET)a, b Pulsed Drain Current (MOSFET) Continuous Source Current (MOSFET Diode Conduction)a, b Average Foward Current (Schottky) Pulsed Foward Current (Schottky) Maximum Power Dissipation (MOSFET)a b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C TJ, Tstg PD TA = 25_C TA = 70_C VDS VGS ID IDM IS IF IFM 2.5 1.6 2.0 1.3
- 55 to 150 2.1 4.0 50 1.4 0.9 1.2 0.8
- 55 to 150 _C W 9 7.5 50 1.2 2.3
Symbol
Limit 10 sec
30 30 "20 6.9 5.6
Steady State
Unit
THERMAL RESISTANCE RATINGS
Parameter
M i Maximum J Junction-to-Ambient ti t A bi t (t v 10 sec) )a
Device
MOSFET Schottky MOSFET
Symbol
Typical
40 50
Maximum
50 60 90...
