Full PDF Text Transcription for SI4834DY (Reference)
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Si4834DY Vishay Siliconix Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V ID (A) 7.5 6....
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V) 30 rDS(on) (W) 0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V ID (A) 7.5 6.5 SCHOTTKY PRODUCT SUMMARY VDS (V) 30 VSD (v) Diode Forward Voltage 0.50 V @ 1.0 A IF (A) 2.0 D1 D1 D2 D2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4834DY Si4834DY-T1 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 Schottky Diode G2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C T