SI4834DY
Vishay Siliconix
Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
PRODUCT SUMMARY
VDS (V)
30 r DS(on) (W)
0.022 @ VGS = 10 V 0.030 @ VGS = 4.5 V
ID (A)
7.5 6.5
SCHOTTKY PRODUCT SUMMARY
VDS (V)
VSD (v) Diode Forward Voltage
0.50 V @ 1.0 A
IF (A)
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View Ordering Information: Si4834DY Si4834DY-T1 (with Tape and Reel) S1 N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 Schottky Diode G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS
10 secs
30 "20 7.5
Steady State
Unit
5.7 4.6 30 A 0.9 1.1 0.7
- 55 to 150 W _C
ID IDM IS PD TJ, Tstg
1.7 2.0 1.3
Operating Junction and Storage Temperature Range
THERMAL RESISTANCE RATINGS
MOSFET Parameter t v 10 sec...
