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N-Channel 12-V (D-S) MOSFET
Si4838DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
12 0.003 at VGS = 4.5 V 0.004 at VGS = 2.5 V
ID (A) 25 20
FEATURES
• Halogen-free According to IEC 61249-2-21 Available
• TrenchFET® Power MOSFETs: 2.5 V Rated • 100 % Rg Tested
S1 S2 S3 G4
SO-8
8D 7D 6D 5D
Top View
Ordering Information: Si4838DY-T1-E3 (Lead (Pb)-free) Si4838DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
G S
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s Steady State
Drain-Source Voltage
VDS 12
Gate-Source Voltage
VGS
±8
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
25 20
17 13
Pulsed Drain Current (10 µs Pulse Width)
IDM 60
Continuous Source Current (Diode Conduction)a
IS 2.9 1.