SI4838BDY
FEATURES
- -
- - Halogen-free Trench FET® Power MOSFET 100 % Rg Tested 100 % UIS Tested
APPLICATIONS
- Low VIN DC/DC
SO-8
S S S G 1 2 3 4 Top View 8 7 6 5 D D D G D
S Ordering Information: Si4838BDY-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C TC = 25 °C TA = 25 °C L = 0.1 m H TC = 25 °C TC = 70 °C TA = 25 °C TA = 70 °C Symbol VDS VGS Limit 12 ±8 34 27 22.5b, c 18.0b, c 70 5.1 2.2b, c 20 20 5.7 3.6 2.50b, c 1.6b, c
- 55 to 150 Unit V
Continuous Drain Current (TJ = 150 °C)
Pulsed Drain Current Continuous Source-Drain Diode Current Single Pulse Avalanche Current Avalanche Energy
IDM IS IAS EAS
A m J
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TJ, Tstg
°C
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambientb,d Maximum Junction-to-Foot (Drain) Notes: a....
