Click to expand full text
Si4835DY
Vishay Siliconix
P-Channel 30-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
- 30
rDS(on) (W)
0.019 @ VGS = - 10 V 0.033 @ VGS = - 4.5 V
ID (A)
- 8.0 - 6.0
S S S
SO-8
S S S G 1 2 3 4 Top View Ordering Information: Si4835DY Si4835DY-T1 (with Tape and Reel) D D D D P-Channel MOSFET 8 7 6 5 D D D D G
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a, b Pulsed Drain Current Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
- 30 "25 - 8.0 - 6.4 - 50 - 2.1 2.5 1.