SI4925BDY Overview
Key Specifications
Package: SOIC
Mount Type: Surface Mount
Pins: 8
Height: 1.75 mm
Key Features
- 7.1 - 5.5 rDS(on) (W) 0.025 @ VGS =
- 10 V 0.041 @ VGS =
- 4.5 V D TrenchFETr Power MOSFET D Advanced High Cell Density Process
Pricing from 1.47 EUR, available from TME and Newark.
Price & Availability
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| TME | 0 | 1+ : 1.47 EUR 10+ : 1.17 EUR 25+ : 1.05 EUR 100+ : 0.97 EUR |
View Offer |
| TME | 0 | 1+ : 1.47 USD 10+ : 1.17 USD 25+ : 1.05 USD 100+ : 0.97 USD |
View Offer |
Related Datasheets
| Part Number | Manufacturer | Description |
|---|---|---|
| Si4925DY | Vishay | Dual P-Channel 30-V (D-S) MOSFET |
| Si4922BDY | Vishay | Dual N-Channel 30-V (D-S) MOSFET |