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Dual P-Channel 30-V (D-S) MOSFET
Si4921DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
rDS(on) (Ω)
- 30 0.025 at VGS = - 10 V 0.042 at VGS = - 4.5 V
ID (A) - 7.3 - 5.6
SO-8
S1 1 G1 2 S2 3 G2 4
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4921DY-T1 Si4921DY-T1-E3 (Lead (Pb)-free)
FEATURES • TrenchFET® Power MOSFET • Advanced High Cell Density Process
APPLICATIONS • Load Switches
- Notebook PCs - Desktop PCs - Game Stations • Battery Switch
S1 S2
Pb-free Available
RoHS*
COMPLIANT
G1 G2
D1 P-Channel MOSFET
D2 P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 sec
Steady State
Drain-Source Voltage
VDS - 30
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
- 7.
SI4921DY Datasheet
