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Dual N-Channel 40-V (D-S) MOSFET
Si4940DY
Vishay Siliconix
PRODUCT SUMMARY
VDS (V)
RDS(on) (Ω)
40 0.036 at VGS = 10 V 0.059 at VGS = 4.5 V
ID (A) 5.7 4.4
FEATURES
• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET • Compliant to RoHS Directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4940DY-T1-E3 (Lead (Pb)-free) Si4940DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
D1 D2
G1 G2
S1 N-Channel MOSFET
S2 N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
10 s
Steady State
Drain-Source Voltage
VDS 40
Gate-Source Voltage
VGS
± 20
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
ID
5.7 4.2 4.5 3.
SI4940DY Datasheet
