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Si4947DY
Dual P-Channel 30-V (D-S) Rated MOSFET
Product Summary
VDS (V)
–30 30
rDS(on) (W)
0.085 @ VGS = –10 V 0.19 @ VGS = –4.5 V
ID (A)
"3.5 "2.5
S1
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
Limit
–30 "20 "3.5 "2.8 "20 –1.7 2.0 1.3 –55 to 150
Unit
V
A
W _C
Thermal Resistance Ratings
Parameter
Maximum Junction-to-Ambienta Notes a.
SI4947DY Datasheet
