SI4947DY Datasheet | Vishay

Dual P-Channel 30-V (D-S) Rated MOSFET Product Summary VDS (V) - 30 30 r DS(on) (W) 0.085 @ VGS = - 10 V 0.19 @ VGS = - 4.5 V ID (A) "3.5 "2.5 S1 S2 SO-8 S1 G1 S2 G2 1 2 3 4 Top View D1 P-Channel MOSFET D2 P-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2 Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM IS PD TJ, Tstg Limit - 30 "20 "3.5 "2.8 "20 - 1.7 2.0 1.3 - 55 to 150 Unit W _C Thermal Resistance Ratings Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Updates to this data sheet may be obtained via facsimile by calling Siliconix Fax Back, 1-408-970-5600. Please request Fax Back document #70156. A SPICE Model data sheet is available for this product (Fax Back document #70554). Symbol Rth JA Limit Unit _C/W Siliconix S-49520- Rev. C, 18-Dec-96 Specifications (TJ = 25_C Unless Otherwise Noted) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Currentb Drain Source On-State Drain-Source On State Resistanceb Forward Transconductance b Diode Forward Voltageb VGS(th) IGSS IDSS ID(on) r DS(on) gfs VSD VDS = VGS, ID = - 250 m A VDS = 0 V, VGS = "20 V VDS...