SI4980DY
SI4980DY is Dual N-Channel MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21 Definition
- Trench FET® Power MOSFETs
- pliant to Ro HS Directive 2002/95/EC
S1 1 G1 2 S2 3 G2 4
SO-8
8 D1 7 D1 6 D2 5 D2
Top View
Ordering Information: Si4980DY-T1-E3 (Lead (Pb)-free) Si4980DY-T1-GE3 (Lead (Pb)-free and Halogen-free)
N-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current (TJ = 150 °C)a
TA = 25 °C TA = 70 °C
Pulsed Drain Current
Continuous Source Current (Diode Conduction)a
Maximum Power Dissipationa
TA = 25 °C TA = 70 °C
Operating Junction and Storage Temperature Range
TJ, Tstg
Limit 80 ± 20 3.7 2.9 30 1.7 2.0 1.3
- 55 to 150
THERMAL RESISTANCE RATINGS
Parameter Maximum Junction-to-Ambienta Notes: a. Surface Mounted on FR4 board, t ≤ 10 s.
Symbol Rth JA
Limit 62.5
Unit V
W °C
Unit...
