SI5433DC Datasheet | Vishay

Vishay Siliconix P-Channel 20-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) r DS(on) (Ω) 0.040 @ VGS = --4.5 V --20 0.052 @ VGS = --2.5 V 0.072 @ VGS = --1.8 V ID (A) --6.7 --5.9 --5.0 S 1206-8 Chip FETt D D D D S D D G Marking Code BD XX Lot Traceability and Date Code D P-Channel MOSFET Part # Code Bottom View Ordering Information: Si5433DC-T1 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Currenta Maximum Power Dissipationa Operating Junction and Storage Temperature Range Soldering Remendations (Peak Temperature)b, c TA = 25_C TA = 85_C TA = 25_C TA = 85_C Symbol VDS VGS ID IDM IS PD TJ, Tstg 5 secs Steady State --20 8 Unit --6.7 --4.8 --20 --2.1 2.5 1.3 --55 to 150 260 --4.8 --3.5 A --1.1 1.3 0.7 W _C THERMAL RESISTANCE RATINGS Parameter M i Maximum J Junction-to-Ambient ti t A bi ta Maximum Junction-to-Foot (Drain) t ≤ 5 sec Steady State Steady State Symbol Rth JA Rth JF Typical 40 80 15 Maximum 50 95 20 Unit _C/ C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. See Reliability Manual for profile. The Chip FET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework Conditions: manual soldering with a soldering iron is not remended for leadless ponents. Document Number: 71233 S-21251- Rev. B, 05-Aug-02...