SI5509DC Description
Si5509DC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) N-Channel 20 0.052 at VGS = 4.5 V 0.084 at VGS = 2.5 V 0.090 at VGS = - 4.5 V P-Channel - 20 0.160 at VGS = - 2.5 V ID (A)a 6.1a 4.8a - 4.8a - 3.6a Qg (Typ.) 3.9.
SI5509DC Key Features
- Halogen-free According to IEC 61249-2-21
- TrenchFET® Power MOSFETs
- pliant to RoHS Directive 2002/95/EC
SI5509DC Applications
- plementary MOSFET for Portable Devices
- Ideal for Buck-Boost Circuits