Datasheet4U Logo Datasheet4U.com

SI5511DC - MOSFET

Key Features

  • Qg (Typ) 4.2 nC.
  • TrenchFET® Power MOSFETs.

📥 Download Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet.co.kr Si5511DC Vishay Siliconix N- and P-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) N-Channel 30 rDS(on) (Ω) 0.055 at VGS = 4.5 V 0.090 at VGS = 2.5 V 0.150 at VGS = - 4.5 V 0.256 at VGS = - 2.5 V ID (A) 4a,g 4a,g - 3.6 a FEATURES Qg (Typ) 4.2 nC • TrenchFET® Power MOSFETs APPLICATIONS • Buck-Boost - DSC - Portable Devices RoHS COMPLIANT P-Channel - 30 - 2.7a 2.