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SI5515CDC - MOSFET

Key Features

  • ID (A)a Qg (Typ. ) 4g 4g 4 g 6.5 nC.
  • Halogen-free According to IEC 61249-2-21 Definition.
  • TrenchFET® Power MOSFETs.
  • 100 % Rg Tested.
  • Compliant to RoHS Directive 2002/95/EC - 4g - 4g - 3.8 6.2 nC.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet.co.kr Si5515CDC Vishay Siliconix N- and P-Channel 20 V (D-S) MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 0.036 at VGS = 4.5 V N-Channel 20 0.041 at VGS = 2.5 V 0.050 at VGS = 1.8 V 0.100 at VGS = - 4.5 V P-Channel - 20 0.120 at VGS = - 2.5 V 0.156 at VGS = - 1.8 V 1206-8 ChipFET® FEATURES ID (A)a Qg (Typ.) 4g 4g 4 g 6.5 nC • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC - 4g - 4g - 3.8 6.2 nC APPLICATIONS • Load Switch for Portable Devices D1 1 S2 S1 D1 D1 3. 0 m m Marking Code G1 S2 EH XXX G2 D2 1.