SI5855DC
SI5855DC is P-Channel MOSFET manufactured by Vishay.
FEATURES
- Halogen-free According to IEC 61249-2-21
Definition
- Trench FET® Power MOSFETs
- Ultra Low Vf Schottky
- Si5853DC Pin patible
- pliant to Ro HS Directive 2002/95/EC
APPLICATIONS
- Charging Circuit in Portable Devices
1206-8 Chip FET®
Marking Code
JB XXX Lot Traceability and Date Code
Part # Code Bottom View
Ordering Information: Si5855DC-T1-E3 (Lead (Pb)-free) Si5855DC-T1-GE3 (Lead (Pb)-free and Halogen-free)
D P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted
Parameter
Symbol
5s
Steady State
Unit
Drain-Source Voltage (MOSFET)
- 20
Reverse Voltage (Schottky)
VKA 20
Gate-Source Voltage (MOSFET)
±8
Continuous Drain Current (TJ = 150 °C) (MOSFET)a
TA = 25 °C TA = 85 °C
- 3.6
- 2.6
-...
