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Si6946DQ
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V)
20
rDS(on) (W)
0.080 @ VGS = 4.5 V 0.110 @ VGS = 2.5 V
ID (A)
2.8 2.1
D
TSSOP-8
D1 S1 S1 G1 1 2 3 4 Top View S N-Channel MOSFET D 8 D2 S2 S2 G2 G
Si6946DQ
7 6 5
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID 2.3 IDM IS PD TJ, Tstg 20 1.0 1.0 W 0.64 –55 to 150 _C A
Symbol
VDS VGS
Limit
20 "8 2.8
Unit
V
THERMAL RESISTANCE RATINGS
Parameter
Maximum Junction-to-Ambienta Notes a.
SI6946DQ Datasheet
