SI6946DQ Datasheet | Vishay

Vishay Siliconix Dual N-Channel 2.5-V (G-S) MOSFET PRODUCT SUMMARY VDS (V) 20 r DS(on) (W) 0.080 @ VGS = 4.5 V 0.110 @ VGS = 2.5 V ID (A) 2.8 2.1 TSSOP-8 D1 S1 S1 G1 1 2 3 4 Top View S N-Channel MOSFET D 8 D2 S2 S2 G2 G 7 6 5 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C ID 2.3 IDM IS PD TJ, Tstg 20 1.0 1.0 W 0.64 - 55 to 150 _C A Symbol VDS VGS Limit 20 "8 2.8 Unit THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. For SPICE model information via the Worldwide Web: http://.vishay.//product/spice.htm Document Number: 70177 S-49534- Rev. E, 06-Oct-97 .vishay. S Fax Back 408-970-5600 Symbol Rth JA Limit Unit _C/W 2-1 Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current VGS(th) IGSS IDSS VDS = VGS, ID = 250 m A VDS = 0 V, VGS = "8 V VDS = 20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 70_C VDS = 5 V, VGS = 4.5 V VDS = 5 V, VGS = 2.5 V VGS = 4.5 V, ID = 2.8 A r DS(on) DS( ) gfs VSD VGS = 2.5 V, ID = 2.1 A VDS = 15 V, ID = 2.8 A IS = 1.0 A, VGS = 0 V 12 1.2 "10 "4 0.080 0.110 W S V 0.6 "100 1 5 V n A m A Symbol Test Condition Min Typ...