SI7136DP-RC
SI7136DP-RC is R-C Thermal Model Parameters manufactured by Vishay.
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Si7136DP_RC
Vishay Siliconix
R-C Thermal Model Parameters
DESCRIPTION The parametric values in the R-C thermal model have been derived using curve-fitting techniques. These techniques are described in "A Simple Method of Generating Thermal Models for a Power MOSFET"[1]. When implemented in P-Spice, these values have matching characteristic curves to the Single Pulse Transient Thermal Impedance curves for the MOSFET.
R-C values for the electrical circuit in the Foster/Tank and Cauer/Filter configurations are included.
Note:
For a detailed explanation of implementing these values in P-SPICE, refer to Application Note AN609 Thermal Simulations Of Power MOSFETs on P-SPICE Platform.
R-C THERMAL MODEL FOR TANK CONFIGURATION
R-C VALUES FOR TANK CONFIGURATION
Thermal Resistance (°C/W) Junction to RT1 RT2 RT3 RT4 Junction to CT1 CT2 CT3 CT4 Ambient 2.0963 9.0488 8.0177 50.6165 Ambient 24.2344 m 558.7573 m 70.7495 m 1.4435 Case 2.3554 m 690.6627 m 1.6922 820.2806 m Case 136.5785 u 595.8486 u 9.9128 m 8.8712 m Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A
Thermal Capacitance (Joules/°C)
This document is intended as a SPICE modeling guideline and does not constitute a mercial product data sheet. Designers should refer to the appropriate data sheet of the same number for guaranteed specification limits.
Document Number: 73741 Revision 16-Jan-06
.vishay. 1
Si7136DP_RC
Vishay Siliconix
R-C THERMAL MODEL FOR FILTER CONFIGURATION
R-C VALUES FOR FILTER CONFIGURATION
Thermal Resistance (°C/W) Junction to RF1 RF2 RF3 RF4 Junction to CF1 CF2 CF3 CF4
Note: NA indicates not applicable
Ambient 5.3871 10.2337 17.6421 36.7131 Ambient 15.7961 m 98.5875 m 538.0285 m 1.3275
Case 657.3010 u 1.0857 1.1764 935.2605 m Case 388.4781 u 322.0178 u 5.2085 m 2.4604 m
Foot N/A N/A N/A N/A Foot N/A N/A N/A N/A
Thermal Capacitance (Joules/°C)
Reference: [1] "A Simple Method of Generating Thermal Models for a Power MOSFET" by Wharton Mc Daniel and Kandarp Pandya,...
