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Si9529DY
Dual N- and P-Channel 2.5-V (G-S) Rated MOSFET
Product Summary
VDS (V)
N Channel N-Channel 20
rDS(on) (W)
0.03 @ VGS = 4.5 V 0.04 @ VGS = 2.5 V 0.05 @ VGS = –4.5 V 0.074 @ VGS = –2.5 V
ID (A)
"6 "5.2 "5 "4.1
D1 D1 S2
P Channel P-Channel
–12 12
SO-8
S1 G1 S2 G2 1 2 3 4 Top View 8 7 6 5 D1 D1 D2 D2 S1 N-Channel MOSFET D2 D2 P-Channel MOSFET G2 G1
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
20 "8 "6 "4.8 "20 1.7 2.0 1.3
P-Channel
–12 "8 "5 "4.
SI9529DY Datasheet
