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Si9958DY
Vishay Siliconix
Complementary 20-V (D-S) MOSFET
PRODUCT SUMMARY
VDS (V)
N-Channel N Ch l 20
rDS(on) (W)
0.10 @ VGS = 10 V 0.12 @ VGS = 6 V 0.15 @ VGS = 4.5 V 0.10 @ VGS = –10 V 0.12 @ VGS = –6V 0.19 @ VGS = –4.5 V
ID (A)
"3.5 "3 "2.5 "3.5 "3 "2.5
P-Channel P Ch l
–20 20
D1
D1
S2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 N-Channel MOSFET D2 D2 8 7 6 5 D1 D1 D2 D2 G1
G2
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C
Symbol
VDS VGS ID IDM IS PD TJ, Tstg
N-Channel
20 "20 "3.