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Si9925DY
Vishay Siliconix
Dual N-Channel 2.5-V (G-S) MOSFET
PRODUCT SUMMARY
VDS (V) rDS(on) (W)
0.05 @ VGS = 4.5 V 20 0.06 @ VGS = 3.0 V 0.08 @ VGS = 2.5 V
ID (A)
5.0 4.2 3.6
D1
D1
D2
D2
SO-8
S1 G1 S2 G2 1 2 3 4 Top View S1 Ordering Information: Si9925DY Si9925DY-T1 (with Tape and Reel) N-Channel MOSFET S2 N-Channel MOSFET 8 7 6 5 D1 D1 D2 D2 G1 G2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a Pulsed Drain Current Continuous Source Current (Diode Conduction)a Maximum Power Dissipationa Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C PD TJ, Tstg TA = 25_C TA = 70_C ID IDM IS
Symbol
VDS VGS
Limit
20 "12 5.0 4.0 48 1.7 2 1.